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Vishay Intertechnology Electronic Components Datasheet

SI1441EDH Datasheet

P-Channel MOSFET

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New Product
Si1441EDH
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
0.041 at VGS = - 4.5 V
0.054 at VGS = - 2.5 V
0.100 at VGS = - 1.8 V
ID (A)a
-4
-4
-4
Qg (Typ.)
12.5 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Typical ESD Performance 1500 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
APPLICATIONS
Load Switch for Portable Devices
- Cellular Phone
- DSC
- Portable Game Console
- MP3
- GPS
Marking Code
G
G3
4S
Top View
Part # code
BQX
XXX
Lot Traceability
and Date code
Ordering Information: Si1441EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
R
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
- 20
± 10
- 4a
-4
- 4a, b, c
- 4a, b, c
- 25
- 2.3
- 1.3b, c
2.8
1.8
1.6b, c
1.0b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 66823
S10-1827-Rev. A, 09-Aug-10
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
www.vishay.com
1
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Vishay Intertechnology Electronic Components Datasheet

SI1441EDH Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si1441EDH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 4.5 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 4.5 V, ID = - 5 A
VGS = - 2.5 V, ID = - 4.4 A
VGS = - 1.8 V, ID = - 1 A
VDS = - 10 V, ID = - 5 A
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = - 10 V, VGS = - 8 V, ID = - 5 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A
f = 1 MHz
VDD = - 10 V, RL = 1.4
ID - 4 A, VGEN = - 4.5 V, Rg = 1
VDD = - 10 V, RL = 1.4
ID - 4 A, VGEN = - 10 V, Rg = 1
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 4 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.4
- 15
0.08
Typ.
Max.
Unit
- 11
2.6
0.034
0.045
0.067
16
-1
±8
±1
-1
- 10
0.041
0.054
0.100
V
mV/°C
V
µA
A
S
22
12.5
1.8
3.3
0.43
150
300
1620
560
50
90
2500
600
33
19
0.86
225
450
2430
840
100
180
3750
900
nC
k
ns
- 0.85
18
8
18
10
- 2.3
- 25
- 1.2
36
16
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66823
S10-1827-Rev. A, 09-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI1441EDH
Description P-Channel MOSFET
Maker Vishay Siliconix
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SI1441EDH Datasheet PDF






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