SI1441EDH Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - Typical ESD Performance 1500 V - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D APPLICATIONS - Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS Marking Code S Part # code BQX XXX Lot Traceability and Date code Top View Ordering Information: Si1441EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 ± 10 - 4a -4 - 4a, b, c - 4a, b, c - 25 - 2.3 - 1.3b, c 2.8 1.8 1.6b, c 1.0b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Document Number: 66823 S10-1827-Rev. A, 09-Aug-10 .vishay. 1 Datasheet pdf - http://..net/ Symbol t5s Steady State Rth JA Rth JF Typical 60 34 Maximum 80 45 Unit...