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Vishay Intertechnology Electronic Components Datasheet

SI1926DL Datasheet

Dual N-Channel MOSFET

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Dual N-Channel 60 V (D-S) MOSFET
Si1926DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 1.4 at VGS = 10 V
3.0 at VGS = 4.5 V
ID (A)
0.37
0.25
Qg (Typ.)
0.47
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• ESD Protected: 1800 V
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
• Low Power Load Switch
S1 1
G1 2
D2 3
6 D1
Marking Code
D1 D2
5 G2
4 S2
PD XX
Lot Traceability
and Date Code
Part # Code
G1
G2
Top View
Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free)
Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
60
± 20
0.37
0.30
0.34b, c
0.27b, c
0.65
0.43
0.25b, c
0.51
0.33
0.30b, c
0.20b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 400 °C/W.
Symbol
RthJA
RthJF
Document Number: 73684
S10-0792-Rev. D, 05-Apr-10
Typical
360
300
Maximum
415
350
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI1926DL Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si1926DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 10 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 85 °C
VDS = 10 V, VGS = 4.5 V
VDS = 7.5 V, VGS = 10 V
VGS = 10 V, ID = 0.34 A
VGS = 4.5 V, ID = 0.23 A
VDS = 30 V, ID = 0.2 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 0.34 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS = 30 V, VGS = 4.5 V, ID = 0.34 A
f = 1 MHz
VDD = 30 V, RL = 100 Ω
ID 0.3 A, VGEN = 10 V, Rg = 1 Ω
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
IS = 0.3 A
IF = 0.6 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
60
1
0.50
0.65
Typ.
56.7
-3
159
18.5
7.5
4.2
0.9
0.5
0.2
0.15
160
6.5
12
13
14
0.8
16.5
13
13.5
3
Max.
Unit
2.5
± 150
1
10
1.4
3
V
mV/°C
V
nA
µA
A
Ω
ms
pF
1.4
0.75
nC
240
10
18
22
21
0.43
0.65
1.2
25
20
Ω
ns
A
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73684
S10-0792-Rev. D, 05-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI1926DL
Description Dual N-Channel MOSFET
Maker Vishay Siliconix
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SI1926DL Datasheet PDF






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