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SI2333DS Datasheet

P-Channel MOSFET

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SPICE Device Model Si2333DS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70106
S-50383Rev. B, 21-Mar-05
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI2333DS Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
SPICE Device Model Si2333DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS ≤ −5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.3 A
VGS = 2.5 V, ID = 4.6 A
VGS = 1.8 V, ID = 2 A
VDS = 5 V, ID = 5.3 A
IS = 1 A, VGS = 0 V
VDS = 6 V, VGS = 4.5 V, ID = 5.3 A
VDD = 6 V, RL = 6
ID ≅ −1 A, VGEN = 4.5 V, RG = 6
Simulated Measured
Data
Data
0.70
116
0.023
0.034
0.049
17
0.78
0.025
0.033
0.046
17
0.70
9.3 11.5
1.5 1.5
3.2 3.2
21 25
19 45
73 72
15 60
Unit
V
A
S
V
nC
ns
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 70106
S-50383Rev. B, 21-Mar-05
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI2333DS
Description P-Channel MOSFET
Maker Vishay Siliconix
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