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Vishay Intertechnology Electronic Components Datasheet

SI2338DS Datasheet

N-Channel MOSFET

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New Product
Si2338DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.028 at VGS = 10 V
30
0.033 at VGS = 4.5 V
SOT-23
ID (A)a, e
6
6
Qg (Typ.)
4.2 nC
G1
3D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters, High Speed Switching
D
(3)
S2
Top View
Marking Code
E8 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si2338DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
30
± 20
6e
6e
5.5b, c
4.4b, c
25
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
TJ, Tstg
2.1
1.1b, c
2.5
1.6
1.3b, c
0.8b, c
- 55 to 150
Soldering Recommendations (Peak Temperature)
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
RthJA
RthJF
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 67877
www.vishay.com
S11-0864-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI2338DS Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si2338DS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 5.5 A
VGS 4.5 V, ID = 5 A
VDS = 15 V, ID = 5.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 5.5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 5.5 A
f = 1 MHz
VDD = 15 V, RL = 3.4
ID 4.4 A, VGEN = 4.5 V, Rg = 1
VDD = 15 V, RL = 3.4
ID 4.4 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 4.4 A, VGS 0 V
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
20
2.5
Typ. Max. Unit
30
- 4.8
0.023
0.027
24
V
mV/°C
2.5
± 100
1
10
0.028
0.033
V
nA
µA
A
S
424
100
42
8.2 13
4.2 7
1.4
1.4
12.6 25.2
6 12
20 30
14 21
10 20
36
11 20
20 30
7 14
2.1
25
0.82 1.2
13 20
6 12
8
5
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67877
2 S11-0864-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI2338DS
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI2338DS Datasheet PDF






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