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Vishay Intertechnology Electronic Components Datasheet

SI2366DS Datasheet

N-Channel MOSFET

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New Product
Si2366DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.036 at VGS = 10 V
30
0.042 at VGS = 4.5 V
ID (A)a
5.8
5.4
Qg (Typ.)
3.2 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
SOT-23
APPLICATIONS
• DC/DC Converters, High Frequency Switching
• Load Switch
• Portable and Consumer Applications
G1
S2
3D
Top View
Marking Code
H6 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2366DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(3)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
VDS
VGS
30
± 20
5.8a
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
ID
IDM
IS
PD
TJ, Tstg
4.7
4.5b, c
3.6b, c
20
1.75
1.04b, c
2.1
1.3
1.25b, c
0.8b, c
- 55 to 150
Soldering Recommendations (Peak Temperature)
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
80
40
Maximum
100
60
Unit
°C/W
Document Number: 67509
www.vishay.com
S11-0612-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI2366DS Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si2366DS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 4.2 A
VDS = 15 V, ID = 4.5 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 4.5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 4.5 A
f = 1 MHz
VDD = 15 V, RL = 4.2 Ω
ID 3.5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 4.2 Ω
ID 3.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 3.6 A, VGS = 0 V
IF = 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
20
0.7
Typ. Max. Unit
33
- 5.5
0.030
0.035
13
V
2.5
± 100
1
10
0.036
0.042
mV/°C
V
nA
µA
A
Ω
S
335
78
30
6.4 10
3.2 5
1.1
1.3
3.5 7
32 48
48 71
18 27
20 30
5 10
12 20
14 21
8 16
pF
nC
Ω
ns
1.75
20
0.85 1.2
12 18
5 10
7
5
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67509
2 S11-0612-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI2366DS
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI2366DS Datasheet PDF






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