900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI2367DS Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
SPICE Device Model Si2367DS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the
- 55 °C to + 125 °C temperature ranges under the pulsed
0 V to 5 V gate drive. The saturated output impedance is best
fit at the gate bias near the threshold voltage. A novel
gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
D
CGD
M2 R1
G
Gy + –
Gx
3 DBD
RG
ETCV
CGS
M1
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 65140
S09-1760-Rev. A, 14-Sep-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI2367DS Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
SPICE Device Model Si2367DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
SIMULATED MEASURED
DATA
DATA
Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 250 µA
VGS = - 4.5 V, ID = - 2.5 A
VGS = - 2.5 V, ID = - 2 A
VDS = - 10 V, ID = - 2.5 A
IS = - 2 A
0.5
0.052
0.070
7.3
- 0.76
-
0.055
0.071
7.5
- 0.79
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 2.5 A
561
112
89
12
7.4
561
112
89
15
9
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A
Qgd
1.0
2.5
1.0
2.5
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
UNIT
V
Ω
S
V
pF
nC
www.vishay.com
2
Document Number: 65140
S09-1760-Rev. A, 14-Sep-09
Datasheet
pdf


Part Number SI2367DS
Description P-Channel MOSFET
Maker Vishay Siliconix
PDF Download

SI2367DS Datasheet PDF






Similar Datasheet

1 SI2367DS P-Channel MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy