The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 5 V gate drive.
| Part number | SI2399DS |
|---|---|
| Manufacturer | Vishay |
| File Size | 126.25 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SI2399DS Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| SI2392ADS | N-Channel MOSFET | Vishay |
| Si2392BDS | N-Channel MOSFET | Vishay |
| Si2392DS | N-Channel MOSFET | Vishay |
| SI2300 | N-Channel MOSFET | Kexin |
| SI2300 | N-Channel MOSFET | HAOCHANG |
| Part Number | Description |
|---|---|
| SI2300DS | N-Channel MOSFET |
| Si2301BD | P-Channel MOSFET |
| SI2301BDS | P-Channel MOSFET |
| SI2301DS | P-Channel MOSFET |
| SI2302ADS | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
