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Vishay Intertechnology Electronic Components Datasheet

SI3424CDV Datasheet

N-Channel MOSFET

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N-Channel 30 V (D-S) MOSFET
Si3424CDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.026 at VGS = 10 V
30
0.032 at VGS = 4.5 V
ID (A)a, b
8
8
Qg (Typ.)
4.2
TSOP-6
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
D
3 mm D
G
16
25
34
2.85 mm
D
D
S
Marking Code
BC XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3424CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
8a
7.7
7.2c, d
5.7c, d
20
3
1.7c, d
3.6
2.3
2.0c, d
1.3c, d
- 55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambiente
Maximum Junction-to-Foot (Drain)
t 5 s
Steady State
Notes:
a. Package limited.
b. Based on TC = 25 °C.
c. Surface mounted on 1" x 1" FR4 board.
d. t = 5 s.
e. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
50
28
Maximum
62.5
35
Unit
°C/W
Document Number: 67443
www.vishay.com
S11-0863-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3424CDV Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3424CDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 7.2 A
VGS = 4.5 V, ID = 6.5 A
VDS = 15 V, ID = 7.2 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 7.2 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 24 V, VGS = 4.5 V, ID = 7.2 A
f = 1 MHz
VDD = 15 V, RL = 2.6
ID 5.7 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 2.6
ID 5.7 A, VGEN = 4.5 V, Rg = 1
TC = 25 °C
IS = 5.7 A
IF = 5.7 A, dI/dt = 100 A/µs
Min.
30
1
20
0.6
Typ.
Max.
Unit
28
- 3.7
0.021
0.026
17
2.5
± 100
1
10
0.026
0.032
V
mV/°C
V
nA
µA
A
S
405
92
42
8.3 12.5
4.2 6.3
1.2
1.6
36
36
12 20
16 24
8 16
10 20
22 33
15 23
9 18
pF
nC
ns
3
A
20
0.8 1.2
V
13 20 nC
5 10
8 ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67443
2 S11-0863-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3424CDV
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI3424CDV Datasheet PDF






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