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Vishay Intertechnology Electronic Components Datasheet

SI3460BDV Datasheet

N-Channel MOSFET

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New Product
N-Channel 20-V (D-S) MOSFET
Si3460BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.027 at VGS = 4.5 V
20 0.032 at VGS = 2.5 V
0.040 at VGS = 1.8 V
ID (A)a
8
8
8
Qg (Typ)
9 nC
FEATURES
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Applications
• Load Switch for Low Voltage Bus
RoHS
COMPLIANT
D
3 mm D
G
TSOP-6
Top View
16
25
34
D
D
S
2.85 mm
Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free)
Marking Code
AF XXX
Lot Traceability
and Date Code
Part # Code
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
±8
8a
7.1
6.7b, c
5.4b, c
20
2.9
1.7b, c
3.5
2.2
2b, c
1.3b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
50
30
Maximum
62.5
36
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74412
S-70187-Rev. A, 29-Jan-07
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3460BDV Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3460BDV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS /TJ
ΔVGS(th) /TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 5.1 A
VGS = 2.5 V, ID = 4.7 A
Forward Transconductancea
VGS = 1.8 V, ID = 2.5 A
gfs VDS = 10 V, ID = 5.1 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 8 V, ID = 8 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 8 A
f = 1 MHz
VDD = 10 V, RL = 1.9 Ω
ID 5.4 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 1.9 Ω
ID 5.4 A, VGEN = 8 V, Rg = 1 Ω
TC = 25 °C
IS = 5.4 A, VGS = 0 V
IF = 5.4 A, di/dt = 100 A/µs, TJ = 25 °C
Min
20
0.45
20
Typ Max Unit
22.5
- 2.9
0.023
0.027
0.033
22
V
mV/°C
1.0
± 100
1
10
0.027
0.032
0.040
V
ns
µA
A
Ω
S
860
110 pF
65
16 24
9 13.5
nC
1.4
1.4
3.2 Ω
7 15
60 90
25 40
6 10 ns
5 10
15 25
25 40
5 10
8
A
20
0.8 1.2
V
20 40 ns
9 20 nC
12 ns
8
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74412
S-70187-Rev. A, 29-Jan-07
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3460BDV
Description N-Channel MOSFET
Maker Vishay Siliconix
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