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Vishay Intertechnology Electronic Components Datasheet

SI3460DDV Datasheet

N-Channel MOSFET

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N-Channel 20 V (D-S) MOSFET
Si3460DDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.028 at VGS = 4.5 V
0.032 at VGS = 2.5 V
0.038 at VGS = 1.8 V
ID (A)d
7.9
7.4
6.8
Qg (Typ.)
6.7 nC
TSOP-6
Top View
D1
6D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
• Load Switch
D
(1, 2, 5, 6)
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
BA XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Avalanche Current
TC = 25 °C
TA = 25 °C
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
G
(3)
(4)
S
N-Channel MOSFET
Limit
20
±8
7.9
6.3
6.2a, b
5.0a, b
20
2.2
1.4a, b
8
3.2
2.7
1.7
1.7a, b
1.1a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Based on TC = 25 °C.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Symbol
RthJA
RthJF
Typical
61
38
Maximum
74
46
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3460DDV Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3460DDV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.1 A
VGS = 2.5 V, ID = 4.7 A
VGS = 1.8 V, ID = 2.5 A
VDS = 10 V, ID = 5.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 8 V, ID = 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 8 V, Rg = 1 Ω
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
20 V
21
- 2.6
mV/°C
0.4 1.0 V
± 100
nA
1
µA
10
20 A
0.023 0.028
0.027 0.032
Ω
0.031 0.038
35 S
666
93 pF
41
12 18
6.7 10.1
0.95
nC
0.5
0.4 2.1 4.2
Ω
6 12
11 20
21 32
8 16
ns
5 10
12 18
19 29
8 16
2.2
A
20
0.8 1.2
V
11 20 ns
3 6 nC
7
ns
4
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3460DDV
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI3460DDV Datasheet PDF






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