SI3460DDV
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to Ro HS Directive 2002/95/EC
TSOP-6 Top View
D 1 6 D
APPLICATIONS
- DC/DC Converters
- Boost Converters
- Load Switch
D (1, 2, 5, 6)
3 mm D
D Marking Code BA XXX Lot Traceability and Date Code Part # Code G (3) (4) S N-Channel MOSFET
2.85 mm
Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Avalanche Energy TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS IAS EAS ID Symbol VDS...
