Si3460DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VGS = 4.5 V, ID = 5.1 A
VGS = 2.5 V, ID = 4.7 A
VGS = 1.8 V, ID = 2 A
VDS = 10 V, ID = 5.1 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 5.1 A
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.45
20
"100
1
5
0.023
0.027
0.032
25
0.8
0.027
0.032
0.038
1.2
V
nA
mA
A
W
S
V
13.5 20
2.3 nC
2.2
0.5 2.9 W
15 30
30 60
70 140 ns
30 60
40 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
16
12
1.5 V
8
4
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
20
16
12
8
4
0
0.0
Transfer Characteristics
TC = -55_C
25_C
125_C
0.4 0.8 1.2 1.6
VGS - Gate-to-Source Voltage (V)
2.0
Document Number: 71329
S-31725—Rev. b, 18-Aug-03
