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Vishay Intertechnology Electronic Components Datasheet

SI3464DV Datasheet

N-Channel MOSFET

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New Product
Si3464DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.024 at VGS = 4.5 V
20 0.028 at VGS = 2.5 V
0.030 at VGS = 1.8 V
ID (A)e
8a
8a
7.1
Qg (Typ.)
11 nC
TSOP-6
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Load Switch for Portable Applications
D1
6D
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
AZ XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3464DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
20
±8
8a
8a
7.5b, c
6.0b, c
20
3
1.7b, c
3.6
2.3
2b, c
1.3b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Document Number: 65712
S10-0218-Rev. A, 25-Jan-10
Typical
50
28
Maximum
62.5
35
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3464DV Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3464DV
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 7.5 A
VGS = 2.5 V, ID = 7.0 A
Forward Transconductancea
VGS = 1.8 V, ID = 6.7 A
gfs VDS = 10 V, ID = 7.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 5 V, ID = 7.5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 7.5 A
f = 1 MHz
VDD = 10 V, RL = 1.7 Ω
ID 6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 1.7 Ω
ID 6 A, VGEN = 5 V, Rg = 1 Ω
TC = 25 °C
IS = 6 A, VGS = 0 V
IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
20 V
23
- 2.6
mV/°C
0.45 1.0 V
± 100
nA
1
µA
10
20 A
0.020 0.024
0.023 0.028
Ω
0.025 0.030
17 S
1065
150
70
12 18
11 17
1.8
1.1
0.4 2.2 4.4
5 10
15 23
43 65
10 20
36
12 18
22 33
8 16
3
20
0.75 1.2
15 23
6 12
8
7
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65712
S10-0218-Rev. A, 25-Jan-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3464DV
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI3464DV Datasheet PDF






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