SI3464DV Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS TSOP-6 Top View D 1 6 D - DC/DC Converters - Load Switch for Portable Applications D (1, 2, 5, 6) 3 mm D D Marking Code AZ XXX Lot Traceability and Date Code Part # Code G (3) (4) S N-Channel MOSFET 2.85 mm Ordering Information: Si3464DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 20 ±8 8a 8a 7.5b, c 6.0b, c 20 3 1.7b, c 3.6 2.3 2b, c 1.3b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) IDM IS TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol Rth JA Rth JF Typical 50 28 Maximum 62.5 35 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 °C/W. e. Based on TC = 25 °C. Document Number: 65712 S10-0218-Rev. A, 25-Jan-10 .vishay. 1 Datasheet pdf - http://..net/ .Data Sheet.co.kr New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic...