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Vishay Intertechnology Electronic Components Datasheet

SI3473CDV Datasheet

P-Channel MOSFET

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New Product
Si3473CDV
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = - 4.5 V
- 12 0.028 at VGS = - 2.5 V
0.036 at VGS = - 1.8 V
ID (A)a
-8
-8
-8
Qg (Typ.)
26 nC
FEATURES
• TrenchFET® Power MOSFET
• PWM Optimized
APPLICATIONS
• Load Switch
• PA Switch
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Marking Code
AR XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3473CDV-T1-E3 (Lead (Pb)-free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 12
±8
- 8a
- 8a
- 8a, b, c
- 6.5b, c
- 20
- 3.5
- 1.67b, c
4.2
2.7
2.0b, c
1.3b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
55
25
Maximum
62.5
30
Unit
V
A
W
°C
Unit
°C/W
Document Number: 69947
S-80796-Rev. B, 14-Apr-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3473CDV Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3473CDV
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 8.1 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 7.1 A
VGS = - 1.8 V, ID = - 2.8 A
Forward Transconductancea
Dynamicb
gfs VDS = - 6 V, ID = - 8.1 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
VDS = - 6 V, VGS = - 8 V, ID = - 8.1 A
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = - 6 V, VGS = - 4.5 V, ID = - 8.1 A
f = 1 MHz
VDD = - 6 V, RL = 0.92 Ω
ID - 6.5 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 6 V, RL = 0.92 Ω
ID - 6.5 A, VGEN = - 8 V, Rg = 1 Ω
TC = 25 °C
IS = - 5.9 A
IF = - 6.5 A, di/dt = 100 A/µs, TJ = 25 °C
Min.
- 12
- 0.4
- 20
Typ. Max. Unit
- 13
3
0.016
0.021
0.026
30
V
mV/°C
- 1.0
± 100
-1
- 10
0.022
0.028
0.036
V
nA
µA
A
Ω
S
2010
580
520
43
26
3.3
7.5
4.8
20
55
60
40
10
15
62
35
65
40
30
85
90
60
15
25
95
55
pF
nC
Ω
ns
- 0.8
50
30
18
32
- 3.5
- 20
- 1.2
75
45
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69947
S-80796-Rev. B, 14-Apr-08
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3473CDV
Description P-Channel MOSFET
Maker Vishay Siliconix
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SI3473CDV Datasheet PDF






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