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Vishay Intertechnology Electronic Components Datasheet

SI4124DY Datasheet

N-Channel MOSFET

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Si4124DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V
40
0.009 at VGS = 4.5 V
ID (A)d
20.5
18.7
Qg (Typ.)
21 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free)
Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Synchronous Rectification
• DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
40
± 20
20.5
16.4
13.6a, b
10.9a, b
50
33
54
4.7
2.1a, b
5.7
3.6
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4124DY Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4124DY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VDS = 15 V, ID = 16 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 16 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 16 A
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
40
1
50
Typ. Max. Unit
46
- 6.7
0.0062
0.0073
55
3
± 100
1
5
0.0075
0.009
V
mV/°C
V
nA
µA
A
Ω
S
3540
335
142
51
21
10.7
3.0
0.75
30
14
38
11
14
10
32
8
0.8
25
19
13
12
77
32
1.5
45
21
60
17
21
15
50
15
32
50
1.2
50
38
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4124DY
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI4124DY Datasheet PDF






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