SI4174DY Datasheet | Vishay

EATURES - Halogen-free According to IEC 61249-2-21 - Trench FET® Power MOSFET - 100 % Rg and UIS Tested APPLICATIONS - Notebook CPU Core - High-Side Switch SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D G D S Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 17 13.5 12b, c 9.6b, c 50 4.5 2.2b, c 20 20 5 3.2 2.5b, c 1.6b, c - 55 to 150 m J Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol Rth JA Rth JF Typical 38 20 Maximum 50 25 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68998 S-82773-Rev. A, 17-Nov-08 .vishay. 1 Datasheet pdf - http://..net/ .Data Sheet.co.kr New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode...