900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI4200DY Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Dual N-Channel 25 V (D-S) MOSFET
Si4200DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
25
RDS(on) (Ω)
0.025 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A)
8a
7.9
Qg (Typ.)
3.6 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
APPLICATIONS
• DC/DC Converter
- Game Console
- Notebook System Power
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
D1 D2
G1 G2
Top View
Ordering Information: Si4200DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
± 16
8a
6.9
7.3b, c
5.8b, c
30
2.3
1.7b, c
12
7.2
2.8
1.8
2.0b, c
1.3b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
Typical
58
38
Maximum
62.5
45
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4200DY Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4200DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 16 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 7.3 A
VGS = 4.5 V, ID = 6.7 A
VDS = 10 V, ID = 7.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 13 V, VGS = 0 V, f = 1 MHz
VDS = 13 V, VGS = 10 V, ID = 7.3 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 13 V, VGS = 4.5 V, ID = 7.3 A
f = 1 MHz
VDD = 13 V, RL = 2.2 Ω
ID 5.8 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 13 V, RL = 2.2 Ω
ID 5.8 A, VGEN = 10 V, Rg = 1 Ω
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 5.8 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 5.8 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
25
1.0
20
0.8
Typ. Max. Unit
25
- 4.4
0.020
0.024
20
V
mV/°C
2.2
± 100
1
10
0.025
0.030
V
nA
µA
A
Ω
S
415
96
37
7.6 12
3.6 6
1.3
0.9
4.1 8.2
9 18
10 20
9 18
8 16
36
10 20
11 20
8 16
pF
nC
Ω
ns
2.3
A
30
0.8 1.2
V
17 26 ns
7 14 nC
10
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4200DY
Description Dual N-Channel MOSFET
Maker Vishay Siliconix
PDF Download

SI4200DY Datasheet PDF





Similar Datasheet

1 Si4200DB-BM TRANSCEIVER
Silicon Laboratories
2 SI4200DY Dual N-Channel MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy