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Vishay Intertechnology Electronic Components Datasheet

SI4202DY Datasheet

Dual N-Channel MOSFET

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Dual N-Channel 30 V (D-S) MOSFET
Si4202DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.014 at VGS = 10 V
30
0.017 at VGS = 4.5 V
ID (A)
12.1
11
Qg (Typ.)
5.4 nC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck
- Notebooks
- Servers
- STB
D1
D2
G1 G2
Top View
Ordering Information: Si4202DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
12.1
11
9.7a, b
8.2a, b
50
3.1
2a, b
15
11.25
3.7
2.6
2.4a, b
1.7a, b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
50
33
Maximum
62.5
41
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 67092
S10-2602-Rev. A, 15-Nov-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4202DY Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4202DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 8 A
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 8 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 3
ID 5 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.0
20
0.5
Typ.
Max.
Unit
33
- 5.3
0.0115
0.0138
33
2.5
± 100
1
10
0.0140
0.0170
V
mV/°C
V
nA
µA
A
S
710
146
63
11.2 17
5.4 8
1.6
1.6
2.5 5
11 22
18 35
14 28
8 16
8 16
9 18
17 34
8 16
pF
nC
ns
0.75
13
5.5
8
5
3.1
50
1.2
26
11
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67092
S10-2602-Rev. A, 15-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4202DY
Description Dual N-Channel MOSFET
Maker Vishay Siliconix
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SI4202DY Datasheet PDF






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