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Vishay Intertechnology Electronic Components Datasheet

SI4204DY Datasheet

Dual N-Channel MOSFET

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Dual N-Channel 20 V MOSFET
Si4204DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.0046 at VGS = 10 V
0.006 at VGS = 4.5 V
ID (A)
19.8a
17.3a
Qg (Typ.)
14.5
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
• Fixed Telecom
Notebook PC
D1
D2
G1 G2
Top View
Ordering Information: Si4204DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
Limit
20
± 20
19.8
15.9
15.5b, c
12.2b, c
50
2.7
1.6b, c
50
20
20
3.25
2.10
2.0b, c
1.25b, c
- 55 to 150
S2
N-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady-State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Symbol
RthJA
RthJF
Typ.
45
29
Max.
62.5
38
Unit
°C/W
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4204DY Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4204DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8 A
VDS = 15 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 10 V, VGS = 0 V, ID = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
VDS = 10 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 10 V, RL = 1 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 10 V, RL = 1 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
TC = 25 °C
IS = 3 A
N-Channel
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
20
1.0
20
0.4
Typ.
Max.
Unit
20
- 5.8
0.0038
0.0047
50
2.4
100
1
10
0.0046
0.0060
V
mV/°C
V
nA
µA
A
Ω
S
2110
926
235
30
14.5
4.5
3.9
1.4
8
15
24
9
18
24
26
13
45
22
2.8
16
30
45
18
35
45
50
26
pF
nC
Ω
ns
0.70
20
10
11
9
2.7
50
1.2
40
20
A
V
ns
nC
nS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4204DY
Description Dual N-Channel MOSFET
Maker Vishay Siliconix
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SI4204DY Datasheet PDF






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