SI4214DDY Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested - 100 % UIS Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Notebook System Power - Low Current DC/DC SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 30 ± 20 8.5 7.5 7.5b, c 5.9b, c 30 2.8 1.8b, c 30 10 5 3.1 2.0 2.0b, c 1.25b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS ISM IAS EAS PD Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. Document Number: 65022 S09-1817-Rev. B, 14-Sep-09 .vishay. 1 Datasheet pdf - http://..net/ t ≤ 10 s Steady-State Symbol Rth JA Rth JF Typ. 52 30 Max. 62.5 40 Unit °C/W .Data Sheet.co.kr New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On -State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic a Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA...