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Vishay Intertechnology Electronic Components Datasheet

SI4214DDY Datasheet

Dual N-Channel MOSFET

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Si4214DDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0195 at VGS = 10 V
30
0.023 at VGS = 4.5 V
ID (A)a
8.5
8.6
Qg (Typ.)
7.1
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
D1
D2
G1 G2
Top View
Ordering Information: Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
8.5
7.5
7.5b, c
5.9b, c
30
2.8
1.8b, c
30
10
5
3.1
2.0
2.0b, c
1.25b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady-State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typ.
52
30
Max.
62.5
40
Unit
°C/W
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4214DDY Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4214DDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID= 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On -State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 5 A
Forward Transconductanceb
gfs VDS = 15 V, ID = 8 A
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, ID = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
VDS = 15 V, VGS = 10 V, ID = 8 A
Qg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ta
tb
VDS = 15 V, VGS = 4.5 V, ID = 8 A
f = 1 MHz
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 2 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
20
0.5
Typ.
Max.
Unit
3.0
- 5.2
0.016
0.019
27
2.5
100
1
10
0.0195
0.023
V
mV/°C
V
nA
µA
A
Ω
S
660
140
86
14.5 22
7.1 11
1.9
2.7
2.6 5.2
14 28
45 80
18 35
12 24
7 14
10 20
15 30
7 14
2.8
30
0.77 1.1
17 34
9 18
10
7
pF
nC
Ω
ns
A
V
ns
nC
nS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4214DDY
Description Dual N-Channel MOSFET
Maker Vishay Siliconix
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