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SIC769ACD - Integrated DrMOS Power Stage

Description

The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC.

The device complies with the Intel DrMOS standard for desktop and server Vcore power stages.

Features

  • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC.
  • Enables Vcore switching at 1 MHz.
  • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions.
  • Low ringing on the VSWH pin reduces EMI.
  • Pin compatible with DrMOS 6 x 6 version 3.0.
  • Tri-state PWM input function prevents negative output voltage swing.
  • 3.3 V logic levels on PWM.
  • MOSFET threshold voltage optimized for 5 V driver bias supply.

📥 Download Datasheet

Datasheet Details

Part number SIC769ACD
Manufacturer Vishay
File Size 614.72 KB
Description Integrated DrMOS Power Stage
Datasheet download datasheet SIC769ACD Datasheet

Full PDF Text Transcription (Reference)

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SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC769ACD delivers up to 35 A continuous output current and operates from an input voltage range of 3 V to 16 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 12 V. The device can also deliver very high power at 5 V output for ASIC applications. The SiC769ACD incorporates an advanced MOSFET gate driver IC.
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