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Vishay Intertechnology Electronic Components Datasheet

SIC779 Datasheet

Integrated DrMOS Power Stage

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Integrated DrMOS Power Stage
SiC779
Vishay Siliconix
DESCRIPTION
The SiC779 is an integrated solution that contains PWM
optimized n-channel MOSFETs (high side and low side) and
a full featured MOSFET driver IC. The device complies with
the Intel DrMOS standard for desktop and server Vcore power
stages. The SiC779 delivers up to 40 A continuous output
current and operates from an input voltage range of 3 V to
16 V. The integrated MOSFETs are optimized for output
voltages in the ranges of 0.8 V to 2.0 V with a nominal input
voltage of 12 V. The device can also deliver very high power
at 5 V output for ASIC applications.
The SiC779 incorporates an advanced MOSFET gate driver
IC. This IC accepts a single PWM input from the VR controller
and converts it into the high side and low side MOSFET gate
drive signals. The driver IC is designed to implement the skip
mode (SMOD) function for light load efficiency improvement.
Adaptive dead time control also works to improve efficiency
at all load points. The SiC779 has a thermal warning (THDN)
that alerts the system of excessive junction temperature. The
driver IC includes an enable pin, UVLO and shoot through
protection.
The SiC779 is optimized for high frequency buck
applications. Operating frequencies in excess of 1 MHz can
easily be achieved.
The SiC779 is packaged in Vishay Siliconix high
performance PowerPAK MLP 6 x 6 package. Compact
co-packaging of components helps to reduce stray
inductance, and hence increases efficiency.
SiC779 APPLICATION DIAGRAM
5V
FEATURES
• Industry benchmark Gen III MOSFETs with
integrated Schottky diode
• DrMOS compliant gate driver IC
• Enables Vcore switching at 1 MHz
• Easily achieve > 93 % efficiency in multi-phase,
low output voltage solutions
• Low ringing on the VSWH pin reduces EMI
• Pin compatible with DrMOS 6 x 6 version 4.0
• Tri-state PWM input function prevents negative output
voltage swing
• 5 V logic levels on PWM
• MOSFET threshold voltage optimized for 5 V driver bias
supply
• Automatic skip mode operation (SMOD) for light load
efficiency
• Under-voltage lockout
• Built-in bootstrap schottky diode
• Adaptive deadtime and shoot through protection
• Thermal shutdown warning flag
• Low profile, thermally enhanced PowerPAK® MLP 6 x 6
40 pin package
• Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS Directive 2002/95/EC
www.DataSheet.net/
APPLICATIONS
• CPU and GPU core voltage regulation
• Server, computer, workstation, game console, graphics
boards, PC
VIN
VCIN
SMOD
DSBL#
PWM
THDN
SiC779CD
BOOT
VSWH
PHASE
VO
Figure 1
Document Number: 67538
www.vishay.com
S11-0703-Rev. B, 18-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.co.kr/


Vishay Intertechnology Electronic Components Datasheet

SIC779 Datasheet

Integrated DrMOS Power Stage

No Preview Available !

SiC779
Vishay Siliconix
ORDERING INFORMATION
Part Number
SiC779CD-T1-GE3
SiC779DB
Package
PowerPAK MLP66-40
Reference board
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Input Voltage
VIN - 0.3
Switch Node Voltage (DC)
VSW
- 0.3
Drive Input Voltage
VDRV
- 0.3
Control Input Voltage
VCIN
- 0.3
Logic Pins
VPWM, VDSBL#,
VTHDN, VSMOD
- 0.3
Boot Voltage DC (referenced to CGND)
Boot Voltage < 200 ns Transient (referenced to CGND)
- 0.3
VBS
- 0.3
Boot to Phase Voltage DC
Boot to Phase Voltage < 200 ns
VBS_PH
- 0.3
- 0.3
Ambient Temperature Range
TA - 40
Maximum Junction Temperature
TJ
Storage Junction Temperature
TSTG
- 65
Soldering Peak Temperature
Note:
www.DataSheet.net/
a. TA = 25 °C and all voltages referenced to PGND = CGND unless otherwise noted.
Max.
20
20
7
7
VCIN + 0.3
27
29
7
9
125
150
150
260
Unit
V
°C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input Voltage
VIN 3 12 16
Control Input Voltage
Drive Input Voltage
VCIN
VDRV
4.5
4.5
5.5
V
5.5
Switch Node
VSW_DC
12 16
Note:
a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to PGND = CGND unless
otherwise noted.
THERMAL RESISTANCE RATINGS
Parameter
Maximum Power Dissipation at TPCB = 25 °C
Maximum Power Dissipation at TPCB = 100 °C
Thermal Resistance from Junction to Top
Thermal Resistance from Junction to PCB
Symbol
PD_25C
PD_100C
Rth_J_TOP
Rth_J_PCB
Typ.
Max.
25
10
15
5
Unit
W
°C/W
www.vishay.com
Document Number: 67538
2 S11-0703-Rev. B, 18-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number SIC779
Description Integrated DrMOS Power Stage
Maker Vishay Siliconix
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SIC779 Datasheet PDF






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