Datasheet Details
| Part number | SIC779 |
|---|---|
| Manufacturer | Vishay |
| File Size | 446.51 KB |
| Description | Integrated DrMOS Power Stage |
| Datasheet |
 SIC779 Datasheet
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General Description
The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC.
The device complies with the Intel DrMOS standard for desktop and server Vcore power stages.
Key Features
- Industry benchmark Gen III MOSFETs with integrated Schottky diode.
- DrMOS compliant gate driver IC.
- Enables Vcore switching at 1 MHz.
- Easily achieve > 93 % efficiency in multi-phase, low output voltage solutions.
- Low ringing on the VSWH pin reduces EMI.
- Pin compatible with DrMOS 6 x 6 version 4.0.
- Tri-state PWM input function prevents negative output voltage swing.
- 5 V logic levels on PWM.
- MOSFET threshold voltage o.