SIC779 Datasheet | Vishay

Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device plies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 delivers up to 40 A continuous output current and operates from an input voltage range of 3 V to 16 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 12 V. The device can also deliver very high power at 5 V output for ASIC applications. The SiC779 incorporates an advanced MOSFET gate driver IC. This IC...