SIC779
Description
The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC.
Key Features
- Industry benchmark Gen III MOSFETs with integrated Schottky diode
- DrMOS pliant gate driver IC
- Enables Vcore switching at 1 MHz
- Easily achieve > 93 % efficiency in multi-phase, low output voltage solutions
- Low ringing on the VSWH pin reduces EMI
- Tri-state PWM input function prevents negative output voltage swing
- 5 V logic levels on PWM
- MOSFET threshold voltage optimized for 5 V driver bias supply
- Automatic skip mode operation (SMOD) for light load efficiency
- Under-voltage lockout
