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Vishay Intertechnology Electronic Components Datasheet

SIHFD020 Datasheet

Power MOSFET

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www.DataSheet.co.kr
IRFD020, SiHFD020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
50
VGS = 10 V
24
7.1
7.1
Single
0.10
HVMDIP
D
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• For Automatic Insertion
• Compact, End Stackable
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
HVMDIP
IRFD020PbF
SiHFD020-E3
IRFD020
SiHFD020
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagea
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currentb
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)c
L = 100 μH
ILM
IL
Maximum Power Dissipation
TC = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. TJ = 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25
d. 1.6 mm from case.
LIMIT
50
± 20
2.4
1.5
19
0.0080
19
2.2
1.0
- 55 to + 150
300d
UNIT
V
A
W/°C
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91465
S11-0915-Rev. A, 16-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIHFD020 Datasheet

Power MOSFET

No Preview Available !

www.DataSheet.co.kr
IRFD020, SiHFD020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = max. rating, VGS = 0 V
VDS = max. rating x 0.8, VGS = 0 V, TC = 125
VGS = 10 V VDS > ID(on) x RDS(on) max.
VGS = 10 V
ID = 1.4 A
VDS = 20 V, ID = 7.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
VGS = 10 V
ID = 15 A,
VDS = max. rating x 0.8
VDD = 25 V, ID = 15 A,
Rg = 18 , RD = 1.7
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
MIN.
50
2.0
-
-
-
2.4
-
4.9
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
-
-
0.080
7.3
-
4.0
± 500
250
1000
-
0.10
-
V
V
nA
μA
A
S
400 -
260 - pF
44 -
16 24
4.7 7.1 nC
4.7 7.1
8.7 13
55 83
ns
16 24
26 39
4.0 -
nH
6.0 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currentc
ISM p - n junction diode
D
G
S
- - 2.4
A
- - 19
Body Diode Voltagea
VSD
TC = 25 °C, IS = 2.4 A, VGS = 0 V
- - 1.4 V
Body Diode Reverse Recovery Time
trr
57 130 310 ns
TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs
Body Diode Reverse Recovery Charge
Qrr
0.17 0.34 0.85 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25
www.vishay.com
2
Document Number: 91465
S11-0915-Rev. A, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SIHFD020
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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