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SIHG20N50C - Power MOSFET

Key Features

  • Low figure-of-merit Ron x Qg.
  • 100 % avalanche tested.
  • High peak current capability.
  • dv/dt ruggedness.
  • Improved Trr/Qrr.
  • Improved gate charge Available.
  • High power dissipations capability.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg max. (nC) Qgs (nC) 560 VGS = 10 V 76 21 Qgd (nC) Configuration 34 Single 0.270 FEATURES • Low figure-of-merit Ron x Qg • 100 % avalanche tested • High peak current capability • dv/dt ruggedness • Improved Trr/Qrr • Improved gate charge Available • High power dissipations capability • Material categorization: for definitions of compliance please see www.vishay.