SS2H10 Datasheet Text
.vishay.
SS2H9, SS2H10
Vishay General Semiconductor
High Voltage Surface-Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SMB (DO-214AA)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF IR TJ max. Package
2.0 A 90 V, 100 V
75 A 0.65 V 10 μA 175 °C SMB (DO-214AA)
Circuit configuration
Single
Features
- Low profile package
Available
- Guardring for overvoltage protection
- Ideal for automated placement
- Low power losses, high efficiency
- Low forward voltage drop
- Low leakage current
- High surge capability
Available
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available...