SS2P3L Datasheet Text
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New Product
SS2P2L, SS2P3L
Vishay General Semiconductor
Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
Features
- Very low profile
- typical height of 1.0 mm
® eSMP Series
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency
- Low thermal resistance
- Meets MSL level 1, per LF maximum peak of 260 °C
- AEC-Q101 qualified J-STD-020,
DO-220AA (SMP)
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF TJ max. 2.0 A 20 V, 30 V 50 A 11.25 mJ 0.45 V 150 °C
MECHANICAL DATA
Case: DO-220AA (SMP) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, RoHS pliant, andmercial grade Base P/NHM3
- halogen-free, RoHS pliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheelling, DC/DC converters, and polarity protection applications.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dV/dt TJ, TSTG SYMBOL SS2P2L 22L 20 2.0 50 11.25 10 000
- 55 to + 150 SS2P3L 23L 30 V A A mJ V/μs °C UNIT
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