SS8P4C Datasheet Text
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New Product
SS8P3C, SS8P4C
Vishay General Semiconductor
High Current Density Surface Mount Dual mon-Cathode Schottky Rectifier eSMP TM Series
K
Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency
- Low thermal resistance
- Meets MSL level 1, per LF maximum peak of 260 °C
- AEC-Q101 qualified J-STD-020,
1 2 TO-277A (SMPC)
K Cathode Anode 1 Anode 2
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max. 2 x 4.0 A 30 V, 40 V 120 A 20 mJ 0.42 V 150 °C
MECHANICAL DATA
Case: TO-277A (SMPC) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, RoHS pliant, and mercial grade Base P/NHM3
- halogen-free, RoHS pliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage total device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode Operating junction and storage temperature range IF(AV) IFSM EAS TJ, TSTG VRRM SYMBOL SS8P3C S83C 30 8.0 4.0 120 20
- 55 to + 150 °C A SS8P4C S84C 40 V A UNIT...