Datasheet4U Logo Datasheet4U.com

SUB70N03-09P - N-Channel MOSFET

Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SUB70N03-09BP N-Channel MOSFET PWM Optimized Vishay
SUB70N04-10 N-Channel MOSFET Vishay
SUB15P01-52 P-Channel MOSFET VBsemi
SUB50N06-18 N-Channel MOSFET TEMIC
SUB60N06-08 N-Channel MOSFET TEMIC

Other Datasheets by Vishay

Part Number Description
SUB70N06-14 N-Channel MOSFET
SUB75N03-04 N-Channel MOSFET
SUB75N03-07 N-Channel MOSFET
SUB75N05-06 N-Channel MOSFET
SUB75N05-06A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model schematic is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Published: |