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SUP/SUB75N05-06
Vishay Siliconix
N-Channel 50-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
50
rDS(on) (W)
0.006
ID (A)
75
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N05-06 SUB75N05-06 N-Channel MOSFET D S
Top View S
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Parameter Symbol
VGS TC = 25_C TC = 125_C ID IDM IAR
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Limit
"20 75a 70 240 75 280 250c PD TJ, Tstg 3.7 –55 to 175 W _C mJ A
Unit
V
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energyb L = 0.
SUB75N05-06 Datasheet
