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SUB75N06-08 - N-Channel MOSFET

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www.DataSheet4U.com SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET rDS(on) (W) 0.008 ID (A) 75a D G D S Top View SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) www.DataSheet4U.com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR Limit "20 75a 55 240 60 280 187c Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d A EAR PD TJ, Tstg mJ W 3.
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