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SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.012 @ VGS = 10 V 0.014 @ VGS = 4.5 V
ID (A)
75 70 D
TO-220AB
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N06-12L SUB75N06-12L N-Channel MOSFET D S
Top View S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C
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Symbol
VDS VGS ID IDM IAR EAR PD PD TJ, Tstg
Limit
60 "20 75 53
Unit
V
A 180 60 180 142b 3.
SUB75N06-12L Datasheet
