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SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.010
ID (A)
75a
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N08-10 D S S N-Channel MOSFET
Top View SUB75N08-10
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
Symbol
VGS ID IDM IAR EAR PD TJ, Tstg
Limit
"20 75a 55
Unit
V
A 240 60 280 187c W 3.
SUB75N08-10 Datasheet
