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SUP/SUB75P03-08
Vishay Siliconix
P-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
–30
rDS(on) (W)
0.008
ID (A)
–75a
TO-220AB
S
TO-263
G
DRAIN connected to TAB G G D S Top View SUP75P03-08 SUB75P03-08 P-Channel MOSFET D S
Top View D
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR
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Symbol
VGS
Limit
"20 –75a –65 –200 –75 280 250d 3.
SUB75P03-08 Datasheet
