Datasheet4U Logo Datasheet4U.com

SUD50N02-04P - P-Channel MOSFET

Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SUD50N025-05P N-Channel MOSFET Vishay
SUD50N025-06P N-Channel MOSFET Vishay
SUD50N025-09BP N-Channel MOSFET Vishay
SUD50N025-4m5P N-Channel MOSFET Vishay
SUD50N03-16P N-Channel MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SUD50N02-06P N-Channel MOSFET
SUD50N02-09P N-Channel MOSFET
SUD50N02-11P N-Channel MOSFET
SUD50N02-12P N-Channel MOSFET
SUD50N024-06P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPICE Device Model SUD50N02-04P Vishay Siliconix N-Channel 20-V (D-S) 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Published: |