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Vishay Intertechnology Electronic Components Datasheet

SiHF634N Datasheet

Power MOSFET

No Preview Available !

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
0.435
I2PAK (TO-262)
TO-220
D
S
D
G
S
D
GG
D2PAK (TO-263)
S
N-Channel MOSFET
GD
S
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRF634NPbF
SiHF634N-E3
SnPb
IRF634N
SiHF634N
Note
a. See device orientation.
D2PAK (TO-263)
IRF634NSPbF
SiHF634NS-E3
IRF634NS
SiHF634NS
D2PAK (TO-263)
IRF634NSTRLPbFa
SiHF634NSTL-E3a
IRF634NSTRLa
SiHF634NSTLa
D2PAK (TO-263)
IRF634NSTRRPbFa
SiHF634NSTR-E3a
IRF634NSTRRa
SiHF634NSTRa
I2PAK (TO-262)
IRF634NLPbF
SiHF634NL-E3
-
-
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHF634N Datasheet

Power MOSFET

No Preview Available !

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
TC = 25 °C
TA = 25 °C
PD
Peak Diode Recovery dV/dt
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torqued
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
LIMIT
250
± 20
8.0
5.6
32
0.59
110
4.8
8.8
88
3.8
7.3
- 55 to + 175
300c
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
Maximum Junction-to-Ambienta
Maximum Junction-to-Ambient
(PCB Mount)b
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surfacea
RthJA
RthJA
RthJC
RthCS
-
-
-
0.50
Notes
a. This is only applied to TO-220 package.
b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
MAX.
62
40
1.7
-
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
MIN. TYP. MAX. UNIT
250 -
-V
- 0.33 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 0.435 Ω
5.4 -
-S
www.vishay.com
2
Document Number: 91033
S-82999-Rev. A, 12-Jan-09


Part Number SiHF634N
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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