IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Current
Repetitive Avalanche Energy
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω, IAS = 8.4 A (see fig. 12).
c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. This is a calculated value limited to TJ = 175 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambientc
Case-to-Sink, Flat, Greased Surfacec
Maximum Junction-to-Case (Drain)
Maximum Junction-to-Ambient (PCB Mount)d
RthJA
RthCS
RthJC
RthJA
TYP.
-
0.50
-
-
LIMIT
250
± 20
14
9.9
56
1.0
180e
8.4
15
150
7.9
- 55 to + 175
300d
10
1.1
MAX.
62
-
1.0
40
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VGS = 20 V
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IDSS
RDS(on)
gfs
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
MIN. TYP. MAX. UNIT
250 -
-V
- 0.33 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 0.240 Ω
8.8 -
-S
www.vishay.com
2
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
