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Vishay Intertechnology Electronic Components Datasheet

SiHF734 Datasheet

Power MOSFET

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Power MOSFET
IRF734, SiHF734
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
450
VGS = 10 V
45
6.6
24
Single
1.2
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF734PbF
SiHF734-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 4.9 A (see fig. 12).
c. ISD 4.9 A, dI/dt 80 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
450
± 20
4.9
3.1
20
0.59
330
4.9
7.4
74
4.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91049
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHF734 Datasheet

Power MOSFET

No Preview Available !

IRF734, SiHF734
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
www.DataSheet4U.com
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 450 V, VGS = 0 V
VDS = 360 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.9 Ab
VDS = 50 V, ID = 2.9 Ab
450 -
-V
- 0.63 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 1.2 Ω
3.0 -
-S
Input Capacitance
Ciss
VGS = 0 V,
- 680 -
Output Capacitance
Coss
VDS = 25 V,
- 190 - pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
- 75 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 45
ID = 4.9 A, VDS = 360 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
- 6.6 nC
Qgd - - 24
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 225 V, ID = 4.9 A
RG = 12 Ω, RD = 45 Ω, see fig. 10b
- 5.9 -
- 22 -
ns
- 40 -
- 21 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 4.9
A
- - 20
Body Diode Voltage
VSD TJ = 25 °C, IS = 4.9 A, VGS = 0 Vb - - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 4.9 A, dI/dt = 100 A/µsb
-
460 690 ns
Qrr - 1.8 2.7 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91049
S-Pending-Rev. A, 19-Jun-08


Part Number SiHF734
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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