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Vishay Intertechnology Electronic Components Datasheet

SiHF9Z22 Datasheet

Power MOSFET

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Power MOSFET
IRF9Z22w,wSw.DiaHtaSFhee9t4UZ.co2m2
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
26
6.2
8.6
Single
0.33
TO-220
S
G
S
D
G
D
P-Channel MOSFET
FEATURES
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
Available
RoHS*
COMPLIANT
• Ease of Paralleling
• Excellent Temperature Stability
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-Channel Power MOSFET’s are designed for
application which require the convenience of reverse polarity
operation. They retain all of the features of the more common
N-Channel Power MOSFET’s such as voltage control, very
fast switching, ease of paralleling, and excellent temperature
stability.
P-Channel Power MOSFETs are intended for use in power
stages where complementary symmetry with N-Channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by the
reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9Z22PbF
SiHF9Z22-E3
IRF9Z22
SiHF9Z22
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain-Gate Voltage (RGS = 20 KΩ)
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
VGDR
ID
IDM
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
L = 100 µH
TC = 25 °C
for 10 s
ILM
IL
PD
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 µH, RG = 25 Ω
c. ISD - 6.7 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C.
d. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91350
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
LIMIT
- 50
± 20
- 50
- 8.9
- 5.6
- 36
0.32
- 36
- 2.2
40
- 55 to + 150
300d
UNIT
V
A
W/°C
A
A
W
°C
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHF9Z22 Datasheet

Power MOSFET

No Preview Available !

IRF9Z22, SiHF9Z22
Vishay Siliconix
www.DataSheet4U.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
1.0
-
MAX.
80
-
3.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = max. rating, VGS = 0 V
VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C
VGS = - 10 V
ID = - 5.6 Ab
VDS = 2 x VGS, IDS = - 5.6 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 9
VGS = - 10 V
ID = - 9.7 A, VDS = - 0.8
max. rating. see fig. 17
VDD = - 25 V, ID = - 9.7 A,
RG = 18 Ω, RD = 2.4 Ω, see fig. 16
(MOSFET switching times are
essentially independent of operating
temperature)
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center
G
LS of die contact
S
Drain-Source Body Diode Characteristics
MIN.
- 50
- 2.0
-
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
-
0.28
3.5
-
- 4.0
± 500
- 250
- 1000
0.33
-
V
V
nA
µA
Ω
S
480 -
320 - pF
58 -
17 26
4.1 6.2 nC
5.7 8.6
8.2 12
57 86
ns
12 18
25 38
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS MOSFET symbol
showing the
D
integral reverse
G
ISM p - n junction diode
S
- - - 9.7
A
- - - 39
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 9.7 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/µsb
56
110 280 ns
Qrr 0.17 0.34 0.85 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91350
S-Pending-Rev. A, 10-Jun-08


Part Number SiHF9Z22
Description Power MOSFET
Maker Vishay Siliconix
Total Page 9 Pages
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