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SiHF9Z34 Datasheet Power MOSFET

Manufacturer: Vishay

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General Description

S D G D P-Channel MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Overview

www.vishay.com IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 34 9.9 16 Single 0.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • P-channel Available.
  • 175 °C operating temperature Available.
  • Fast switching.
  • Ease of paralleling.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts wi.

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