Description
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low TO-220AB IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20 PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Key Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling Available RoHS* compliant
- Simple drive requirements
