450 1.2
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Dist. 4.8 mm
* Dynamic dV/dt
* Low Ther.

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and externa.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware.

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