SiHFP048 mosfet equivalent, power mosfet.
60 0.018
* Dynamic dV/dt Rating
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Ease of Paralleling
* Simple Drive Requirements
where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 p.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications wh.
Image gallery
Download