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SiHFU214 - Power MOSFET

Download the SiHFU214 datasheet PDF (SiHFR214 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Surface-mount (IRFR214, SiHFR214).
  • Straight lead (IRFU214, SiHFU214).
  • Available in tape and reel.
  • Fast switching Available.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFR214_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

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www.vishay.com IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 2.0 8.2 1.8 4.5 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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