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SiHFU9110 - Power MOSFET

Download the SiHFU9110 datasheet PDF (SiHFR9110 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Surface-mount (IRFR9110, SiHFR9110).
  • Straight lead (IRFU9110, SiHFU9110).
  • Available in tape and reel.
  • P-channel Available.
  • Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFR9110_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) -100 VGS = -10 V 1.2 8.7 2.2 Qgd (nC) Configuration 4.1 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel Available • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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