TLCB Key Features
- Untinted non diffused lens
- Utilizing ultrabright AllnGaP (AS) and InGaN technology e2
- High luminous intensity
- High operating tempreature: Tj (chip junction temperature) up to 125 °C for AllnGaP devices
- Luminous intensity and color categorized for each packing unit
- ESD-withstand voltage: 2 kV acc. to MIL STD 883 D, Method 3015.7 for AllnGaP, 1 kV for InGaN
- Lead-free device
