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V40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V40150C PIN 1 PIN 2 PIN 3 CASE VI40150C PIN 1 PIN 2 PIN 3 K.

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Datasheet Details

Part number V40150C
Manufacturer Vishay
File Size 163.38 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V40150C Datasheet
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Full PDF Text Transcription

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www.vishay.com V40150C, VI40150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 3 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V40150C PIN 1 PIN 2 PIN 3 CASE VI40150C PIN 1 PIN 2 PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.
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