* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT2045C
Vishay ↗ Siliconix
99.17 KB
Dual low-voltage trench mos barrier schottky rectifier.
New Product VBT2045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® .
📁 Related Datasheet
VBT2045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080S-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
