VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Name: VBT4045C
SKU: VBT4045C-694900

Vishay Siliconix

The VBT4045C by Vishay Siliconix is a Dual Low-Voltage Trench MOS Barrier Schottky Rectifier. Below is the official datasheet preview.

Datasheet Details

Part number	VBT4045C
Manufacturer	Vishay Siliconix
File Size	99.20 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT4045C_VishaySiliconix.pdf
Additional preview pages of the VBT4045C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
Not recommended for PCB bottom side wave mounting.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT4045C PIN 1 PIN 2 K.

📁 VBT4045C Similar Datasheet

VBT4045C-E3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4045BP - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4045BP-E3 - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT4060C - Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C-E3 - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10202C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

Other Datasheets by Vishay Siliconix

Published: Mar 31, 2011 |