VLMK82 Key Features
- Utilizing AlInGaP technology
- Very low thermal resistance
- Optical efficiency 40 lm/W at 100 mA e4
- Luminous intensity and color grouping
- Luminous intensity ratio per package unit IVmax./IVmin. ≤ 1.6
- ESD-withstand voltage: up to 2 kV according to JESD22-A114-B
- patible with IR-reflow solder processes according to CECC 00802 and J-STD-020C
- Lead (Pb)-free device
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
- Preconditioning: acc. to JEDEC level 4