VLMW63 Key Features
- High efficient
- Utilizing InGaN technology
- Very low thermal resistance, high optical e4 power
- Optical efficiency 30 lm/W
- Luminous intensity and color grouping
- Luminous intensity ratio per package unit IVmax./IVmin. ≤ 1.6
- ESD-withstand voltage: up to 2 kV according to JESD22-A114-B
- patible with IR reflow solder processes according to CECC 00802 and J-STD-020C
- Lead (Pb)-free device
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC