VLMW84 Key Features
- Utilizing InGaN technology
- Very low thermal resistance, high optical power e4
- Optical efficiency 40 lm/W at 100 mA
- Luminous intensity and color grouping
- Luminous intensity ratio per package unit IVmax/IVmin ≤ 1.6
- ESD-withstand voltage: up to 1 kV according to JESD22-A114-B
- patible with IR reflow solder processes according to CECC 00802 and J-STD-020C
- Lead (Pb)-free device
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
- Preconditioning: acc. to JEDEC level 4